Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-01-25
2011-01-25
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23141, C257SE21495, C438S623000, C556S434000, C556S433000
Reexamination Certificate
active
07875981
ABSTRACT:
To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below.where, R1, R2, R3, and R4may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.
REFERENCES:
patent: 4801507 (1989-01-01), Estes et al.
patent: 2004/0152296 (2004-08-01), Matz et al.
patent: 2006/0122351 (2006-06-01), Laine et al.
patent: 2006/0204680 (2006-09-01), Hattori et al.
patent: 2007/0026689 (2007-02-01), Nakata et al.
patent: 1-313528 (1989-12-01), None
patent: 5-051458 (1993-03-01), None
patent: 2000-290287 (2000-10-01), None
patent: 2004-303777 (2004-10-01), None
patent: 2006-319114 (2006-11-01), None
European Office Action, issued Mar. 17, 2010 for corresponding European Patent Application No. 08100966.4.
European Search Report dated Jul. 6, 2009, issued in corresponding European Patent Application No. 08100966.4.
Japanese Office Action dated May 26, 2009, issued in corresponding Japanese Patent Application No. 2007-045762.
Laine, R. M. et al.; “Organic/Inorganic Molecular Hybrid Materials from Cubic Silsesquioxanes”; Organic/Inorganic Hybrid Materials II., Apr. 5, 1999, pp. 3-14, vol. 576, San Francisco, CA, XP000897883.
Lichtenhan, J. D. et al.; “Nanostructured Chemicals: A New Era in Chemical Technology”; 32nd International Sample Technical Conference, Nov. 5-9, 2000, pp. 185-191, vol. 32, XP009040986.
Kobayashi Yasushi
Nakata Yoshihiro
Ozaki Shirou
Fujitsu Limited
Montalvo Eva Yan
Pizarro Marcos D.
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Insulating film material, multilayer interconnection... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulating film material, multilayer interconnection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating film material, multilayer interconnection... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2622040