Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2011-04-05
2011-04-05
Evans, Jefferson (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07920361
ABSTRACT:
It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.
REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6347049 (2002-02-01), Childress et al.
patent: 6661625 (2003-12-01), Sin et al.
patent: 6754053 (2004-06-01), Yoshikawa et al.
patent: 6784509 (2004-08-01), Yuasa et al.
patent: 6905780 (2005-06-01), Yuasa et al.
patent: 6937446 (2005-08-01), Kamiguchi et al.
patent: 7038893 (2006-05-01), Koui et al.
patent: 7046489 (2006-05-01), Kamiguchi et al.
patent: 7071522 (2006-07-01), Yuasa et al.
patent: 7072153 (2006-07-01), Koui et al.
patent: 7116529 (2006-10-01), Yoshikawa et al.
patent: 7130164 (2006-10-01), Koui et al.
patent: 7145754 (2006-12-01), Koui et al.
patent: 7190558 (2007-03-01), Iwasaki et al
patent: 7196877 (2007-03-01), Yoshikawa et al.
patent: 7218483 (2007-05-01), Yuasa et al.
patent: 7223485 (2007-05-01), Yuasa et al.
patent: 7248448 (2007-07-01), Fukuzawa et al.
patent: 2002/0048690 (2002-04-01), Fukuzawa et al.
patent: 2005/0167770 (2005-08-01), Fukuzawa et al.
patent: 2006/0067017 (2006-03-01), Yuasa et al.
patent: 2006/0071287 (2006-04-01), Yuasa et al.
patent: 2006/0164764 (2006-07-01), Kamiguchi et al.
patent: 2006/0181814 (2006-08-01), Koui et al.
patent: 2007/0014149 (2007-01-01), Nagamine et al.
patent: 2007/0086121 (2007-04-01), Nagase et al.
patent: 2007/0096229 (2007-05-01), Yoshikawa et al.
patent: 2007/0154740 (2007-07-01), Yuasa et al.
patent: 2007/0177310 (2007-08-01), Yuasa et al.
patent: WO 2006/006420 (2006-01-01), None
U.S. Appl. No. 12/409,716, filed Mar. 24, 2009, Kitagawa, et al.
U.S. Appl. No. 12/409,654, filed Mar. 24, 2009, Yoshikawa, et al.
J.C. Slonczewski, “Current-driven excitation of magnetic multilayers”, Journal of Magnetism and Magnetic Materials, N.H Elsevier, vol. 159, 1996, pp. L1-L7.
U.S. Appl. No. 11/832,203, filed Aug. 1, 2007, Kitagawa, et al.
U.S. Appl. No. 11/779,034, filed Jul. 17, 2007, Fukuzawa, et al.
U.S. Appl. No. 11/626,042, filed Jan. 23, 2007, Yoshikawa, et al.
Kai Tadashi
Kishi Tatsuya
Kitagawa Eiji
Nagase Toshihiko
Yoda Hiroaki
Evans Jefferson
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Magnetoresistive effect element with intermediate oxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive effect element with intermediate oxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive effect element with intermediate oxide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2621810