Solid-state image pickup device, electronic apparatus using...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S459000, C257S447000, C257S460000, C257SE23011, C257SE31054

Reexamination Certificate

active

07947528

ABSTRACT:
A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

REFERENCES:
patent: 6090688 (2000-07-01), Ogawa et al.
patent: 6406942 (2002-06-01), Honda
patent: 07-245386 (1995-09-01), None
patent: 2001-257337 (2001-09-01), None
patent: 2003-031785 (2003-01-01), None
patent: 2003-273343 (2003-09-01), None

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