Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
1999-02-02
2001-10-16
Tran, Minh Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S431000, C257S447000, C257S443000, C257S460000
Reexamination Certificate
active
06303943
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to organic, polymer-based photodiodes and to their use in one and two dimensional image sensors. In more preferred embodiments, it concerns organic polymer-based photodiodes which are voltage switchable and which may be arrayed as image sensors in the form of a column-row (x-y) passively addressable matrix, where the x-y addressable organic image sensors (image arrays) have full-color or selected-color detection capability, or as linear photodiode arrays.
2. State of the Art
The development of image array photodetectors has a relatively long history in the solid state device industry. Early approaches to imaging technology included devices based on thermal effects in solid state materials. These were followed by high sensitivity image arrays and matrices based on photodiodes and charge-coupling devices (“CCDs”) made with inorganic semiconductors. These arrays can be simple linear (or “one dimensional”) arrays which scan an image or they can be two dimensional, like the image.
Photodiodes made with inorganic semiconductors, such as silicon, represent a class of high quantum yield, photosensitive devices. They have been used broadly in visible light detection applications in the past decades. However, they characteristically present a flat current-voltage response, which makes it difficult to use them in fabricating high pixel density, x-y matrix-addressable passive image sensors. An “x-y” matrix is a two dimensional array with a first set of electrodes perpendicular to a second set of electrodes. When passive devices such as resistors, diodes or liquid crystal cells are used as the pixel elements at the intersection points, the matrix is often called a “passive” matrix in contrast to an “active” matrix in which active devices, such as transistors, are used to control the turn-on for each pixel.
To effectively address an individual pixel from the column and row electrodes in a two dimensional passive matrix, the pixel elements must exhibit strongly nonlinear current-voltage (“I-V”) characteristics or an I-V dependence with a threshold voltage. This requirement provides the foundation for using light-emitting diodes or liquid crystal cells to construct passive x-y addressable displays. However, since the photoresponse of inorganic photodiodes is voltage-independent in reverse bias, photodiodes made with inorganic semiconductor crystals are not practical for use in high pixel density, passive image sensors—there is too much cross-talk between pixels. To avoid cross-talk, existing two dimensional photodiode arrays made with inorganic photodiodes must be fabricated with each pixel wired up individually, a laborious and costly procedure. In the case of such individual connections, the number of input/output leads is proportional to the number of the pixels. The number of pixels in commercial two dimensional photodiode arrays is therefore limited to ≦16×16=256 due to the difficulties in manufacturing and in making inter-board connections. Representative commercial photodiode arrays include the Siemens KOM2108 5×5 photodiode array, and the Hamamatsu S3805 16×16 Si photodiode array.
The development of charge-coupled devices (“CCDs”) provided an additional approach toward high pixel density, two-dimensional image sensors. CCD arrays are integrated devices. They are different than x-y addressable matrix arrays. The operating principle of CCDs involves serial transfer of charges from pixel to pixel. These interpixel transfers occur repeatedly and result in the charge migrating, eventually, to the edge of the array for read-out. These devices employ super-large integrating circuit (“SLIC”) technology and require an extremely high level of perfection during their fabrication. This makes CCD arrays costly (~$10
3
-10
4
for a CCD of 0.75″−1″ size) and limits commercial CCD products to sub-inch dimensions.
The thin film transistor (“TFT”) technology on glass or quartz substrates, which was developed originally for the needs of liquid crystal displays, can provide active-matrix substrates for fabricating large size, x-y addressable image sensors. A large size, full color image sensor made with amorphous silicon (a—Si) p-i-n photocells on a—Si TFT panels was demonstrated recently [R. A. Street, J. Wu, R. Weisfield, S. E. Nelson and P. Nylen, Spring Meeting of Materials Research Society, San Francisco, Apr. 17-21 (1995); J. Yorkston et al., Mat. Res. Soc. Sym. Proc. 116, 258 (1992); R. A. Street, Bulletin of Materials Research Society 11(17), 20 (1992); L. E. Antonuk and R. A. Street, U.S. Pat. No. 5,262,649 (1993); R. A. Street, U.S. Pat. No 5,164,809 (1992)]. Independently, a parallel effort on small size, active-pixel photosensors based on CMOS technology on silicon wafers has been re-activated following developments in the CMOS technology which provide submicron resolution [For a review of recent progress, see: Eric J. Lerner, Laser Focus World 32(12) 54, 1996]. This CMOS technology allows the photocells to be integrated with the driver and the timing circuits so that a mono-chip image camera can be realized.
CCDs, a—Si TFTs, and active-pixel CMOS image sensors represent the existing/emerging technologies for solid state image sensors. However, because of the costly processes involved in fabrication of these sophisticated devices, their applications are severely limited. Furthermore, the use of SLIC technologies in the fabrication processes limits the CCDs and the active-pixel CMOS sensors to sub-inch device dimensions.
Photodiodes made with organic semiconductors represent a novel class of photosensors with promising process advantages. Although there were early reports, in the 1980s, of fabricating photodiodes with organic molecules and conjugated polymers, relatively small photoresponse was observed [for an review of early work on organic photodiodes, see: G. A. Chamberlain, Solar Cells 8, 47 (1983)]. In the 1990s, there has been progress using conjugated polymers as the active materials; see for example the following reports on the photoresponse in poly(phenylene vinylene), PPV, and its derivatives,: S. Karg, W. Riess, V. Dyakonov, M. Schwoerer, Synth. Metals 54, 427 ( 1993); H. Antoniadis, B. R. Hsieh, M. A. Abkowitz, S. A. Jenekhe, M. Stolka, Synth. Metals 64, 265 (1994); G. Yu, C. Zhang, A. J. Heeger, Appl. Phys. Lett. 64, 1540 (1994); R. N. Marks, J. J. M. Halls, D. D. D. C. Bradley, R. H. Frield, A. B. Holmes, J. Phys.: Condens. Matter 6, 1379 (1994); R. H. Friend, A. B. Homes, D. D. C. Bradley, R. N. Marks, U.S. Pat. No. 5,523,555 (1996)].
The photosensitivity in organic semiconductors can be enhanced by excited-state charge transfer; for example, by sensitizing the semiconducting polymer with acceptors such as C
60
or its derivatives [N. S. Sariciftci and A. J. Heeger, U.S. Pat. No. 5,331,183 (Jul. 19, 1994); N. S. Sacriftci and A. J. Heeger, U.S. Pat. No. 5,454,880 (Oct. 3, 1995); N. S. Sariciftci, L. Smilowitz, A. J. Heeger and F. Wudl, Science 258, 1474 (1992); L. Smilowitz, N. S. Sariciftci, R. Wu, C. Gettinger, A. J. Heeger and F. Wudl, Phys. Rev. B 47, 13835 (1993); N. S. Sariciftci and A. J. Heeger, Intern. J. Mod. Phys. B 8, 237 (1994)]. Photoinduced charge transfer prevents early time recombination and stabilizes the charge separation, thereby enhancing the carrier quantum yield for subsequent collection [B. Kraabel, C. H. Lee, D. McBranch, D. Moses, N. S. Sariciftci and A. J. Heeger, Chem. Phys. Lett. 213, 389 (1993); B. Kraabel, D. McBranch, N. S. Sariciftci, D. Moses and A. J. Heeger, Phys. Rev. B 50, 18543 (1994); C. H. Lee, G. Yu, D. Moses, K. Pakbaz, C. Zhang, N. S. Sariciftci, A. J. Heeger and F. Wudl, Phys. Rev. B. 48, 15425 (1993)]. By using charge transfer blends as the photosensitive materials in photodiodes, external photosensitivity of 0.2-0.3 A/Watt and external quantum yields of 50-80% el/ph have been achieved at 430 nm at low reverse bias voltages [G. Yu, J. Gao, J. C.
Cao Yong
Yu Gang
Tran Minh Loan
Uniax Corporation
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