Semiconductor device

Details Semiconductor device Semiconductor device

1990-03-19

1991-10-08

Hille, Rolf

357 234, 357 41, 357 42, H01L 2702, H01L 2910

Patent

active

050559044

ABSTRACT:
A semicondcutor device and a manufacturing method thereof are disclosed in which higher integration can be achieved without increasing the total manufacturing steps. The semiconductor device includes at least two MOS transistors having the same channel types, the gate electrodes of which are constructed of polycrystal silicon layers which contain an impurity, and a bipolar transistor, the base electrode of which is constructed of a polycrystal silicon layer which contains and impurity. In particular, the respective gate electrodes of the two MOS transistors contain impurities of different conductivity types from one another.

REFERENCES:
"Submicron Bipolar-CMOS Technology Using 16 GHz Double Poly-Si Bipolar Devices", Yamaguchi et al., 1988, IEDM, pp. 748-751.

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