Charged-particle-beam optical systems

Details Charged-particle-beam optical systems Charged-particle-beam optical systems

1998-04-23

2000-05-16

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250396ML, H01J 3730

Patent

active

060640715

ABSTRACT:
Charged-particle optical systems are disclosed for transferring high-resolution patterns from a mask to a wafer. One embodiment comprises a symmetric magnetic doublet lens and a plurality of deflectors. The deflectors satisfy variable axis lens (VAL) conditions and establish an effective optical axis. The deflectors also deflect the charged-particle beam so that a principal ray coincides with the effective optical axis. Symmetry conditions are provided for the symmetric magnetic doublet and the deflectors. In another embodiment, deflectors use a common series current.

REFERENCES:
patent: 5633507 (1997-05-01), Pfeiffer et al.
Hosokawa, "Systematic elimination of third order aberrations in electron beam scanning system" Optik 56 No. 1 (1980) pp. 21-30.

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