Electric heating – Heating devices – Combined with container – enclosure – or support for material...
Reexamination Certificate
2000-03-24
2001-10-30
Walberg, Teresa (Department: 3742)
Electric heating
Heating devices
Combined with container, enclosure, or support for material...
C219S411000, C219S405000, C118S724000, C118S725000, C118S050100, C392S416000, C392S418000
Reexamination Certificate
active
06310323
ABSTRACT:
TECHNICAL FIELD AND BACKGROUND OF THE INVENTION
The present invention generally relates to a rapid thermal heating apparatus for heating substrates and, more particularly, to a heating apparatus for heating semiconductor substrates in an evacuated processing chamber.
In semiconductor fabrication, a semiconductor substrate is heated during various temperature activity processes, for example during film deposition, oxide growth and etching. Temperatures associated with processing semiconductor substrates are relatively high, for example typically in a range of about 400° C. to
1150° C.
When heating the substrate, it is preferable to heat the substrate uniformly. Uniform temperature in the substrate provides uniform process variables on the substrate. Uniformity in the process variables is also affected by gas flow uniformity across the substrate. Reduced pressure in the processing chamber also provides enhanced control over the gas flow across the substrate. Therefore, it is highly often desirable to operate these various processes in a reduced pressure environment.
However, when operating in vacuums, heat transfer by convection is effectively zero and heat dissipation is typically limited to heat transfer by conduction and radiation. As a result, in some cases, heaters may not be able to sustain an optimal power output for a given process and, further, may suffer degradation due to the limited heat dissipation. As a result, the performance of heaters is hampered and, further, may have reduced longevity.
Consequently, there is a need for a heater assembly which can operate in vacuum, such as in a processing chamber of a reactor for a processing semiconductor control over the temperature of the substrate and, further, without degrading the heater assembly itself.
SUMMARY OF THE INVENTION
Accordingly, the present invention provides a heating assembly for use in rapid thermal processing of semiconductor substrates that can provide a sustained optimal power output while exercising enhanced control over the temperature of a substrate without degrading the heater assembly even while operating in a vacuum.
In one form of the invention, a heating assembly for heating semiconductor substrates includes a plurality of heater supports and a plurality of heating devices. The heating devices are supported by the heater supports, which are adapted to the heating devices whereby the heating devices may be operated to produce a high powered output while maintaining the temperature of the heating devices below a maximum threshold level.
In one aspect, the heating devices comprise infrared heating devices. For example, each of the heating devices may comprise an infrared energy emitting filament and a housing which encloses the filament. The filament includes electrodes extending from the housing for electrically coupling to an external power supply.
In further aspects, the electrodes of the heating devices are supported by the heater supports. In preferred form, the heater supports comprise fluid cooled heater supports. For example, the heating assembly preferably includes a fluid coolant system, which circulates coolant through at least a portion of the heater supports to thereby cool the heating devices.
According to another form of the invention, a heating assembly for heating a semiconductor substrate in a processing chamber of a reactor includes a plurality of heater supports and a plurality of heating devices, which are supported by the heater supports. The heater supports provide conductive paths for the heating devices for coupling the heating devices to an external power source and, further, are adapted to cool the heating devices whereby the heating devices may be operated at a high power output while maintaining the temperature of the heating devices below a maximum threshold level.
In one aspect, each of the heater supports is cooled by a coolant system. In other aspects, each of the heating devices includes a pair of electrodes. Each of the heater supports includes at least one electrode support which couples to the electrodes of the heating devices to support the heating devices. In further aspects, the electrode supports are adapted to cool the heating devices. In other aspects, each of the heater supports includes a tubular member which is coupled to a respective electrode support. The tubular members are adapted to cool the electrode supports to cool the heating devices. For example, the tubular members may be in communication with a cooling system, which cools the tubular members. In preferred form, the cooling system includes a manifold, which circulates coolant through at least a portion of the tubular members thereby cooling the tubular members, the electrode supports, and the heating devices.
In other aspects, the electrode supports comprise conductive electrode supports, which provide conductive paths for the heating devices for electrically coupling the heating devices to an external power supply. In further forms, tubular members comprise conductive tubular members, which provide conductive paths for the heating devices for electrically coupling the heating devices to an external power supply.
According to another form of the invention, a semiconductor substrate is heated by a plurality of heating devices which are energized to produce a power output and, further, which are cooled whereby the heating devices may be energized to produce an increased power output while maintaining the temperature of the heating devices below a maximum threshold level to optimize the heating of the semiconductor substrate.
In one aspect, the electrodes of the heating devices are supported by supports, which are cooled to cool the electrodes of the heating devices. In further aspects, the supports are cooled by circulating a coolant through at least a portion of the supports, for example by circulating water.
In other aspects, the heating devices are energized by energizing the electrodes of the heating devices through the supports.
These and other objects, features, and advantages will become more apparent from the study of the drawings and description which follows.
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Arend John M.
Mahawili Imad
Fuqua Shawntina
Micro C Technologies, Inc.
Van Dyke Gardner, Linn & Burkhart, LLP
Walberg Teresa
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