Method of making etched-striped substrate planar laser

Details Method of making etched-striped substrate planar laser Method of making etched-striped substrate planar laser

1977-06-13

1978-07-11

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 331 945H, 357 16, 357 18, H01L 2120, H01L 2174, H01S 306

Patent

active

040999998

ABSTRACT:
A method of making a diode laser in which a pump current confining channel is formed on the substrate side of a diode laser prior to growth of the active or recombination region of the diode laser. The current confining channel is formed by providing, by diffusion, a rectifying junction on a substrate surface and then forming, by etching, a narrow channel completely through a central portion of the diffused layer and the rectifying junction. The remaining layers of the diode laser are then successively grown. The portions of the rectifying junction on both sides of the channel are reverse biased when the primary junction of the diode laser is forward biased whereby pump current flow is confined to a path through the channel.

REFERENCES:
patent: 3824493 (1974-07-01), Hakki
patent: 3849790 (1975-11-01), Gottmann et al.
patent: 3920491 (1975-11-01), Yonezu
patent: 3978428 (1976-08-01), Burnham et al.
patent: 3984262 (1976-10-01), Burnham et al.
patent: 4033796 (1977-07-01), Burnham et al.
T. Tsukada, "GaAs-Ga.sub.1-x Al.sub.x As Buried-Heterostructure Injection Lasers", Jr. Appl. Phys., 45 (1974) 4899.
W. P. Dumke et al., "Room Temp. Laser Array With Buried Diff. Stripes," IBM-TDB, vol. 16 (1973) 1758.
J. C. Marinace et al., "Narrow Junction Lasers," IBM-TDB, vol. 15 (1972) 562.

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