Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
1994-12-13
2001-02-20
Smith, Matthew (Department: 2825)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230MP, C204S298380
Reexamination Certificate
active
06189481
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a microwave plasma processing apparatus for producing plasma from processing gas by a microwave and processing a wafer or similar semiconductor substrate by the plasma.
In the semiconductor devices art, plasma processing technologies are extensively used for treating wafers or similar semiconductor substrates accurately. Among them, a microwave plasma processing apparatus using a microwave implements an inherently high plasma density and reduces processing time. Japanese Patent Publication No. 5-3734, for example, proposes an apparatus of the type having a waveguide and a plasma processing chamber. A microwave propagated through the waveguide is emitted into the plasma processing chamber in which a wafer or similar semiconductor substrate is positioned, thereby generating plasma in the chamber. Specifically, the microwave is radiated into the chamber on the basis of a microwave distribution which is set up in the waveguide and can be readily estimated by computation. Ideally, the plasma density distribution conforms to the microwave distribution emitted into the chamber. A method of controlling the microwave distribution in the waveguide is taught in, for example, Japanese Patent Laid-Open Publication Nos. 62-122217 and 4-84426.
The method taught in the above Laid-Open Publication No. 62-122217 chances or controls the microwave distribution in the waveguide by inserting a plurality of variable tuner rods into the waveguide. The method disclosed in the other Laid-Open Publication No. 4-84426 controls the microwave distribution by moving a variable deflection plate disposed in the waveguide. In any case, it has been customary to control the plasma distribution indirectly through the control over the microwave distribution in the waveguide.
However, controlling the plasma distribution through the control over the microwave distribution in the waveguide is not a direct implementation. With this kind of method, it is difficult to control the plasma distribution in a desired manner. Specifically, the plasma distribution in the processing chamber is determined by the distribution of microwave radiation which is, in turn, determined by the interaction of the microwave and the gas or gas plasma in the chamber. Stated another way, the plasma distribution depends on the gas to be used. Therefore, it is extremely difficult to control the plasma distribution only through the control over the microwave distribution in the waveguide.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a microwave plasma processing apparatus capable of controlling a plasma distribution in a plasma processing chamber in a desired manner.
In accordance with the present invention, a microwave plasma processing apparatus for producing plasma from processing gas by a microwave and processing an object by the plasma has a housing defining a processing chamber for accommodating the object, a first flat electrode disposed in the processing chamber to be loaded with the object, a second flat electrode parallel to the first flat electrode and formed with a plurality of radiation ports for radiating a microwave into the processing chamber, and a mechanism for changing the respective areas of the plurality of radiation ports of the second electrode.
REFERENCES:
patent: 3573190 (1971-03-01), Bloom
patent: 4102768 (1978-07-01), Kearin
patent: 4278528 (1981-07-01), Kuehnle
patent: 4893584 (1990-01-01), Doehler et al.
patent: 4985109 (1991-01-01), Otsubo
patent: 5074985 (1991-12-01), Tamura
patent: 5130170 (1992-07-01), Kanai et al.
patent: 62-122217 (1987-06-01), None
patent: 4-84426 (1992-03-01), None
patent: 5-3734 (1993-01-01), None
Hullinger Robert A
NEC Corporation
Smith Matthew
Sughrue Mion Zinn Macpeak & Seas, PLLC
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