Nonvolatile semiconductor memory having three dimension charge c

Details Nonvolatile semiconductor memory having three dimension charge c Nonvolatile semiconductor memory having three dimension charge c

1990-01-25

1991-10-08

James, Andrew J.

357 22, 357 47, 357 41, 357 52, 357 55, H01L 29161, H01L 2980, H01L 2934

Patent

active

050558900

ABSTRACT:
A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

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