FET with a super lattice channel

Details FET with a super lattice channel FET with a super lattice channel

1990-01-18

1991-10-08

Jackson, Jr., Jerome

357 2312, H01L 2712, H01L 4500, H01L 2978

Patent

active

050558870

ABSTRACT:
An improved FET is disclosed. The transistor is characterized in that its channel is in the form of a superlattice. The superlattice structure provides a number of square well potential areas through which carriers can pass with little interaction with the gate insulating film. The advantages of the superlattice structure are further enhanced by modifying the energy band structure to reduce carrier concentration near a gate insulating film.

REFERENCES:
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4794611 (1988-12-01), Hara et al.
patent: 4908678 (1990-03-01), Yamazaki

Affiliated with

Also associated with

Rating

FET with a super lattice channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FET with a super lattice channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FET with a super lattice channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-260212