Electricity: power supply or regulation systems – Output level responsive – Using a three or more terminal semiconductive device as the...
Reexamination Certificate
2000-07-11
2001-10-23
Nguyen, Matthew (Department: 2838)
Electricity: power supply or regulation systems
Output level responsive
Using a three or more terminal semiconductive device as the...
C363S059000
Reexamination Certificate
active
06307359
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a DC-DC converter.
2. Description of the Related Art
A prior art DC-DC converter is formed by an inductor connected to an input terminal, a MOS transistor connected between the inductor and a ground terminal, a diode for supplying energy accumulated by the inductor to an output terminal, a capacitor connected between the output terminal and the ground terminal, a driver circuit for driving the MOS transistor, and a control circuit for controlling the driver circuit. The driver circuit and the control circuit are powered by an output voltage at the output terminal. This will be explained later in detail.
In the above-described prior art DC-DC converter, however, since the gate-to-source voltage of the MOS transistor is low to increase the ON-resistance thereof, the DC-DC conversion efficiency is low.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a DC-DC converter with a large DC-DC conversion efficiency.
According to the present invention, in a DC-DC converter including an inductor connected to an input terminal, a MOS transistor connected between the inductor and a ground terminal, a diode for supplying energy accumulated by the inductor to an output terminal, a capacitor connected between the output terminal and the ground terminal, a driver circuit for driving the MOS transistor, and a control circuit for controlling the driver circuit, a voltage doubler is provided to generate a power supply voltage approximately twice an output voltage at the output terminal. Thus, the gate-to-source voltage of the MOS transistor is twice the output voltage, to decrease the ON-resistance of the MOS transistor.
REFERENCES:
patent: 5572414 (1996-11-01), Komori
patent: 5627460 (1997-05-01), Bazinet et al.
patent: 5861735 (1999-01-01), Uchida
patent: 6154380 (2000-11-01), Assow et al.
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patent: 11-69787 (1999-03-01), None
McGinn & Gibb PLLC
NEC Corporation
Nguyen Matthew
LandOfFree
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