Combined bipolar and MOSFET switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307446, 307544, 307566, 307270, 307572, H03K 1710, H03K 1708, H03K 1756, H03K 17687

Patent

active

047602937

ABSTRACT:
Power MOSFETs for switching high voltages have a relatively high on-state DC resistance. The invention provides for the connection in series of a low voltage MOSFET with a higher voltage bipolar transistor. This series circuit is connected in parallel with a series circuit consisting of another MOSFET and a threshold switch. The threshold switch is placed between the base terminal and the free terminal of the low voltage MOSFET. The MOSFETs receive a joint control signal (u.sub.1) which is routed to the low voltage MOSFET. In the case of an inductive load with recovery operation, the signal is routed through a delay element that becomes active when the circuit is turned on.

REFERENCES:
patent: 3601630 (1971-08-01), Redwine
patent: 3609479 (1971-09-01), Lin et al.
patent: 3733597 (1973-05-01), Healey et al.
patent: 4274014 (1981-06-01), Schade, Jr.
patent: 4280065 (1981-07-01), Minato et al.
patent: 4347445 (1982-08-01), Baker
patent: 4356416 (1982-10-01), Weischedel
patent: 4360744 (1982-11-01), Taylor
patent: 4366522 (1982-12-01), Baker
patent: 4384287 (1983-05-01), Sakuma
patent: 4547686 (1985-10-01), Chen
Chen et al., "Application of Transistor Emitter-Open Turn-Off Scheme to High Voltage Power Inverters", IEEE Transactions on Industry Applications, vol. 1A-18, No. 4, pp. 411-415, Jul.-Aug. 1982.
Fischer et al., "Leistungs-MOSFETs in der Energieelekronik Teil IV und Schlub", Elektrie, vol. 36, No. 7, pp. 366-370, 1982.
B. Taylor, HEXFETs in hochsperrenden Schaltungen bei hohem Wirkungsgrad", Elektronik 23/1981, pp. 93 to 96.

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