Thin film capacitor

Details Thin film capacitor Thin film capacitor

1992-05-13

1993-11-16

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361305, 361313, H01G 410, H01G 101

Patent

active

052629201

ABSTRACT:
In a thin film capacitor in which a lower electrode,a dielectric film and an upper electrode are formed in order on a substrate, both the lower and upper electrodes are respectively formed with a first conductive layer made of Ti, Ta, Mo and W and a second conductive layer made of Pt, Pd, Rh and Al in this order from the substrate. In addition, a conductive metal oxide film such as made of PdO and others is formed, as required, at least between the lower electrode and the dielectric film or between the upper electrode and the dielectric film.

REFERENCES:
patent: 3851228 (1974-11-01), Sheard
patent: 4437139 (1984-03-01), Howard
patent: 4631633 (1986-12-01), Shaulov
patent: 4733328 (1988-03-01), Blazej
patent: 5005102 (1991-04-01), Larson
patent: 5122477 (1992-06-01), Wolters et al.
"Barrier Layers for Realization of High Capacitance Density in SrTiO.sub.3 Thin-Film Capacitor on Silicon", Applied Physics Letters, 57 (23), 3 Dec. 1990, Toshiyuki Sakuma et al., pp. 2431-2433.
"RF Sputtered Strontium Titanate Films", IBM Journal of Res. Development, W. B. Pennebaker, Nov. 1969, pp. 686-695.

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