Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
1999-09-13
2001-12-04
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S014000, C117S015000, C117S201000, C117S208000
Reexamination Certificate
active
06325851
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a crystal manufacturing apparatus and method.
2. Description of the Prior Art
The CZ method is known as a technique for manufacturing crystals like single silicon crystals. In the CZ method, melt level fixed control is used to keep the thermal environment of the solid-liquid interface.
Under that control, lifted height of the seed axis is assumed to be the grown length of the crystal, and pulling conditions of the crystal are determined from the assumed length.
SUMMARY OF THE INVENTION
The feature of this invention is utilizing the relation among a seed, crucible, and melt. That is, an actual grown length is calculated from the seed lifted height, crucible lifted height, and melt dropped depth. With this construction, precise grown length can be obtained under any pulling conditions.
REFERENCES:
patent: 5269875 (1993-12-01), Sonokawa et al.
patent: 5437242 (1995-08-01), Hofstetter et al.
patent: 5660629 (1997-08-01), Shiraishi et al.
patent: 52-48111 (1977-12-01), None
patent: 357206809A (1982-12-01), None
patent: 06092784 A (1994-04-01), None
patent: 10114597 A (1998-05-01), None
Komatsu Electronic Metals Co.
Kunemund Robert
Welsh & Katz Ltd.
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