Ion implanter

Details Ion implanter Ion implanter

1998-11-02

2001-12-04

Anderson, Bruce (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S441110, C250S398000

Reexamination Certificate

active

06326630

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates to an ion implanter, and especially relates to an ion implanter to implant a high-speed ion into a material to be processed such as a silicon wafer which is prevented from being charged up so as to be processed with high accuracy.
An example of a conventional ion implanter will be explained using
FIG. 3
at first.
FIG. 3
is a sectional view showing total construction of the conventional ion implanter. To the ion beam drawn from an ion source
2
is applied a magnetic field in a mass separator
4
to change the direction thereof, so that only the ion species that should be implanted into a wafer
15
arrives at the wafer
15
.
Therefore, ions which should not be implanted to the wafer
15
, collide with a beam dump
5
or an isolation slit
6
arranged in the mass separator
4
so as to be removed.
The ion beam leaving the mass separator
4
is accelerated to have an energy necessary for being implanted by a post acceleration tube
7
, and is introduced to a quadrupole lens section
8
.
The beam entering the quadrupole lens section
8
is shaped to have a suitable beam shape for being implanted to the wafer
15
.
The ion beam leaving the quadrupole lens section
8
, is transmitted to an ion beam deflection section
13
for isolating and removing electrically neutral components after passing through an exit of the mass separator
4
, and only the ion components are introduced to the ion implantion room
14
to be implanted to the wafer
15
.
An electron gun
18
and a secondary electron supplying plate
19
to generate secondary electrons by the electrons emitted from the electron gun
18
are arranged between the ion beam deflection section
13
and the ion implanting room
14
, and the generated secondary electrons are supplied to the wafer
15
.
In this way, the wafer
15
is prevented from being charged up, and quality degradation of the wafer
15
caused by particles generated when being discharged or by destruction of the insulation film is prevented.
Recently, the ion implanter, and especially the electron supplying system thereof, has become large and complicated according to increasing of the beam current, and the measurement system for measuring quantity of the implanted ion has become complicated as well. As a result, the ion implanter has become more expensive.
Furthermore, in the ion implanter for producing SIMOX (Separation by IM plant ion Oxygen) substrate, as the temperature of the wafer needs to be kept high, there arises a problem that measurement of the quantity of the implanted ion becomes difficult when used the conventional device. For example, Japanese patent laid-open 9-245705(1997) discloses an example of a conventional ion implanter as stated above.
Moreover, in the ion implanter for large current, as the implanted ion beam current becomes large compared with the conventional device, the wafer implanted with the ions is charged up easily.
SUMMARY OF THE INVENTION
Referring to various problems of the conventional device as stated above, an object of the present invention is in providing an ion implanter in which charging up of the wafer is prevented effectively.
The present invention adopts the following means in order to solve the above problem.
In the ion implanter applying the present invention, a means for generating a beam plasma by an ion beam near the material to be processed such as a wafer being implanted by the ion, is provided.
Further, in an ion implanter having an ion source for generating the ion beam, a mass separator for separating and emitting only a necessary ion beam component from the ion beam, a post acceleration tube for accelerating the ion beam emitted from the mass separator so as to have energy necessary for the ion implanting, a quadrupole lens section for shaping the accelerated ion beam to have a suitable beam shape for being implanted to the wafer, an ion deflection section for isolating and removing electrically neutral beam components from the shaped ion beam, and an ion implanting room for implanting the ions to the processed material by implanting the ion beam for which neutral beam components have been removed, the post acceleration tube at least holds its degree of high vacuum, and the degree of vacuum of the ion implanting room is held to generate the beam plasma.


REFERENCES:
patent: 5311028 (1994-05-01), Glavish
patent: 5389793 (1995-02-01), Aitken et al.
patent: 5483077 (1996-01-01), Glavish
patent: 0 225 717 (1987-06-01), None
patent: 03 102755 (1991-04-01), None
patent: 9-245705 (1997-09-01), None
patent: 97 07525 (1997-02-01), None

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