Magnetoresistance effects film

Details Magnetoresistance effects film Magnetoresistance effects film

1998-03-11

2000-05-16

Kiliman, Leszek

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

428336, 428692, 428694R, 428694T, 428694TM, 428694TS, 428900, 360113, 338 32R, 324252, G11B 566

Patent

active

06063491&

ABSTRACT:
The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.

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