Method for fabricating ohmic contacts on semiconducting diamond

Details Method for fabricating ohmic contacts on semiconducting diamond Method for fabricating ohmic contacts on semiconducting diamond

1989-06-29

1991-10-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437193, 437194, H01L 3113

Patent

active

050554247

ABSTRACT:
A method is disclosed for fabricating ohmic contacts on semiconducting diamond. A carbide forming metal is deposited over a surface of the semiconducting diamond. In some applications, one or more layers of an intermediate metal are deposited over the carbide forming metal. A corrosion resistant metal is then deposited over the intermediate metal, if present, or the carbide forming metal. The semiconducting diamond and metals are heated in an inert environment at a temperature anywhere from 350 to 1200 degrees Celsius.

REFERENCES:
patent: 3611064 (1971-10-01), Hall et al.
patent: 4443653 (1984-04-01), Catalano et al.
Moazed et al., "Electrical Contacts to Semiconducting Diamond", Proc. High requency Power Conversion Conf., May 1989.

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