Method of producing a monocrystalline layer on a substrate

Details Method of producing a monocrystalline layer on a substrate Method of producing a monocrystalline layer on a substrate

1977-08-17

1979-02-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 148183, 357 91, 427 86, H01L 21203, H01L 21363

Patent

active

041405463

ABSTRACT:
A monocrystalline layer is vapor-deposited on a substrate surface while substantially simultaneously such surface is irradiated with an ion beam having ions with a kinetic energy of at least 10 keV. The resultant ion current impinging on the substrate surface is controlled in such a manner that the sum of the vaporization rate and sputtering rate caused by such ions is smaller than the combined condensation rate of such ions and vaporized particles.

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Naganuma et al., "Ionized Zn Doping of GaAs MBE Films", Appl. Phys. Letts. 27, (1975) 342.
Takagi et al., "Ionized Cluster Beam Deposition in Ion Impln. in S/C ed. S. Namba, Plenum Press, 1974.
Mattox, "Fundamentals of Ion Plating", 341, J. Vac. Sci. Tech. 10 (1973) 47.

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