Fishing – trapping – and vermin destroying
Patent
1990-11-13
1991-10-08
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 33, 437 67, 437151, 437909, 148DIG10, 148DIG11, H01L 21265
Patent
active
050554182
ABSTRACT:
A complementary NPN and PNP contactless vertical transistor structure is formed by a process that includes the steps of providing: (1) a buried layer and P-- tub for NPN; (2) a channel stopper for NPN, and a buried layer for PNP; (3) isolation oxide for NPN and PNP; (4) a sink for NPN, and a ground for PNP; (5) a base for NPN, and a sink for PNP; (6) a base for PNP; (7) a N+ poly implant for NPN emitter and PNP extrinsic base; (8) a P+ poly implant for NPN extrinsic base and PNP emitter; (9) poly definition; (10) silicide exclusion for resistors and diodes; (11) contacts; (12) first metal; (13) vias; (14) second metal; and (15) scratch protection.
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New Technology for High-Power IC, IEEE Transactions on Electron Devices, Jan. 1971, pp. 45-49, Kobayashi.
Hearn Brian E.
National Semiconductor Corporation
Trinh Michael
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