Semiconductor memory device having memory cell matrix obliquely

Details Semiconductor memory device having memory cell matrix obliquely Semiconductor memory device having memory cell matrix obliquely

1993-09-13

1994-04-19

LaRoche, Eugene R.

Static information storage and retrieval

Interconnection arrangements

36518901, 365196, 365202, 365207, G11C 1300, H01L 2710, H01L 2968

Patent

active

053052528

ABSTRACT:
A dynamic random access memory device comprises a matrix of memory cell pairs each consisting of two memory cells formed in an active area, a plurality of word line pairs provided in association with the columns of the memory cell pairs, and a plurality of first bit lines respectively paired with a plurality of second bit lines for forming a plurality of bit line pairs, and every adjacent two rows of the memory cell pairs are alternately coupled to the first and second bit lines of one of the bit line pairs, wherein the active area is formed into a generally rectangular shape having a longitudinal direction obliquely extending with respect to the longitudinal direction of the associated first or second bit line so that a vacancy between two adjacent memory cell pairs is minimized without sacrifice of simple pattern of a field oxide film.

REFERENCES:
patent: 4586171 (1986-04-01), Fujishima
patent: 4651183 (1987-03-01), Lange et al.
patent: 5012309 (1991-04-01), Nakayama
patent: 5014103 (1991-05-01), Ema
patent: 5045899 (1991-09-01), Arimoto

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