Silicon delta-doped gallium arsenide/indium arsenide...

Details Silicon delta-doped gallium arsenide/indium arsenide... Silicon delta-doped gallium arsenide/indium arsenide...

2000-02-11

2001-01-09

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S190000, C257S201000, C257S609000, C257S615000, C257S657000

Reexamination Certificate

active

06172420

ABSTRACT:

FIELD OF THE INVENTION
This invention relates generally to the field of contacts and, more particularly, to an ohmic contact and methods of manufacture.
BACKGROUND OF THE INVENTION
Traditionally, AuGeNi ohmic contacts are used for GaAs based FETs and HEMTs. This requires annealing the device after contacts to temperatures greater than 300-400° C. Non-alloyed ohmic contacts to gallium arsenide (GaAs) have been demonstrated in the past by growing indium gallium arsenide (InGaAs) on GaAs and utilizing the contact to indium arsenide (InAs) to achieve low resistance. In the past the only way to achieve low contact resistance has been to grade the contact layer with In
( 1-x)
Ga
x
As, where X varies from 1 to 0, i.e. the layer varies from GaAs to InAs. The problem is that this graded growth introduces substantial complexity in the growth process and is not suitable for selectively grown contacts.
Accordingly, it would be highly desirable to provide improved fabrication methods for ohmic contacts.
It is a purpose of the present invention to provide improved fabrication methods for multi-layer heterostructures.
It is another purpose of the present invention to decrease contact resistance in a multi-layer heterostructure.
It is still another purpose of the present invention to provide a new and improved method of providing continuity at a crystalline/substrate interface of an ohmic contact.
It is a further purpose of the present invention to provide a new and improved fabrication method for non-alloyed ohmic contacts.
SUMMARY OF THE INVENTION
The above problems and others are at least partially solved and the above purposes and others are realized in a method of fabricating an ohmic contact and of providing substantial continuity at a crystalline material/substrate interface. The method is generally comprised of the steps of providing a substrate, growing a crystalline material on the substrate and delta doping close to an interface of the substrate and the crystalline material with silicon to provide substantial continuity at the interface.


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Et al., “Delta-doped ohmic contacts to n-GaAs”, Appl. Phys. Lett. 49 (5), Aug. 4, 1986, pp. 292-294.
Et al., “Si Atomic-Planar-doping in GaAs Made by Molecular Beam Epitaxy”, Japanese Journal of Applied Physics, vol. 24, No. 8, Aug., 1985 pp. L602-604.
Et al., “Ohmic contacts to N-GaAs using graded band gap layer of Ga 1-xlnxAs grown by molecular beam epitaxy”, J. Vac. Sci. Technol., 19(3), Sep./Oct. 1981 pp. 626,627.
Physics of Semiconductor Devices, 1981. p. 307.
Grider et al., Delta-Doped Complementary heterostructure FETs with high Y-Value Pseudomorphic InyGa1-yAs Channels for ultra-Low-Power Digital IC Applications, IEDM 91, pp. 235-238, 1991.*

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