Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-06-05
1998-07-28
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257641, 257758, H01L 2358, H01L 2348
Patent
active
057866384
ABSTRACT:
A moisture impervious film 24 such as silicon nitride is formed under an interlayer insulating film, covering the active region of an IC chip. The interlayer insulating film is formed, for example, by lamination of a silicon oxide film, a spin-on-glass (SOG) film, and another silicon oxide film. Moisture (H.sub.2 O) is intercepted by the moisture impervious film and does not reach the active region. It is possible to avoid the conductivity type inversion at the surface of a p-type well region in the active region and to suppress the corrosion of wiring layers, improving the reliability of the IC chip. The moisture impervious film is not limited to be formed at the layer under the silicon oxide film, but it is sufficient only if the film is formed at the layer under the SOG film.
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"Moisture-Blocking Mechanism of ECR-Plasma SiO2 and High Reliable Performance of Multilevel A1 Metalization", M. Doki et al., pp. 235-239, Jun. 7-8, 1994 VMIC Conference.
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Monin Donald
Yamaha Corporation
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