Method of making a stacked thin film assembly

Details Method of making a stacked thin film assembly Method of making a stacked thin film assembly

1994-09-26

2000-05-16

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437192, 437194, H01L 21302

Patent

active

060628693

ABSTRACT:
A stacked film assembly for use as wiring in a semiconductor device having a bottom film (CVD-W film) 33 and a top film (Al alloy film) 12, where the surface roughness (Ra) of the bottom film is less than 100 .ANG. and the crystal orientation of the top film formed on this surface is controlled, a CVD method for the making thereof, and a semiconductor device in which the stacked film assembly is employed. Even when there is no lattice matching of the bottom film and the top film, crystal orientation of the top film can be sufficiently controlled to provide a targeted face ((111) face with aluminum film), and in particular it will be possible to readily form a stacked film assembly having a satisfactory barrier function as well as sufficient EM resistance and with good film formation.

REFERENCES:
patent: 5400738 (1995-03-01), Shiomi et al.

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