Control circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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Details

C327S112000

Reexamination Certificate

active

06175256

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates to a control circuit for controlling a power semiconductor, the control circuit comprising a gate driver comprising a control input, auxiliary voltage inputs and an output.
For some time, gate drivers equipped with optical isolation have been commercially available that can be used for controlling at most an approximately 100-ampere power semiconductor, such as an IGBT or FET. The reason for the limited power semiconductor rating is the limited current output capacity of a gate driver, which makes it impossible to control high-current power semiconductors in a reliable manner. Because of the above-mentioned problem, using such a gate driver necessitates a separate amplifier stage by means of which the current feeding capacity can be made to satisfy the needs of larger power semiconductors as well.
BRIEF DESCRIPTION OF THE INVENTION
An object of the present invention is to provide a control circuit avoiding the disadvantages mentioned above, also enabling high-current power semiconductors to be controlled in a reliable manner while employing a simple circuit. This object is achieved by a control circuit in accordance with the invention, the control circuit being characterized in that the control circuit further comprises a first semiconductor switch comprising a control electrode and main electrodes, a first main electrode forming the positive input pole of the control circuit and a second main electrode forming the output of the control circuit; a second semiconductor switch comprising a control electrode and main electrodes, a first main electrode forming the negative input pole of the control circuit and a second main electrode being connected to the output of the control circuit; a first resistance whose first pole is connected to the positive auxiliary voltage input of the gate driver and whose second pole is connected to the positive input pole of the control circuit, the positive auxiliary voltage input being arranged to control the first semiconductor switch; a second resistance whose first pole is connected to the negative auxiliary voltage input of the gate driver and whose second pole is connected to the negative input pole of the control circuit, the negative auxiliary voltage input being arranged to control the second semiconductor switch; a first zener diode whose anode is connected to the output of the gate driver and whose cathode is connected to the positive input pole of the control circuit; a second zener diode whose cathode is connected to the output of the gate driver and whose anode is connected to the negative input pole of the control circuit.
The control circuit in accordance with the invention is based on the idea that the current output capacity of a gate driver is increased by utilizing a simple circuit. The control circuit comprises semiconductor switches that form an output, which is cophasal with the output of the gate driver. Current obtained tained via the semiconductor switches at the output is significantly higher than current from a mere gate driver output. Owing to the fact that the outputs are cophasal, the control circuit is unnoticeable to other components possibly connected thereto; hence, when designing other parts or sub-entities belonging to the same operational entity, it is unnecessary to take into account the addition of auxiliary components belonging to the control circuit.


REFERENCES:
patent: 5939908 (1999-08-01), Moore et al.
patent: 5952856 (1999-09-01), Horiguchi et al.
patent: 5986832 (1999-11-01), Barnett
patent: 5990710 (1999-11-01), Ngo et al.
patent: 6040721 (2000-03-01), Fischer et al.
patent: 6087862 (2000-07-01), Williams

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