Multiple input bit-line detection with phase stealing latch...

Static information storage and retrieval – Interconnection arrangements

Reexamination Certificate

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Details

C365S230010, C365S230050

Reexamination Certificate

active

06278627

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to the field of memory devices and embedded memories in general, and more specifically to sensing data signals from memory cells and temporarily latching a high speed memory output.
BACKGROUND OF THE INVENTION
Read Only Memory (ROM) is used in various devices ranging from calculators to mainframe computer systems. Normally, ROM is used to store critical instructions or data for use by a processor. An example of such instructions would be system boot up instructions. The processor can access these instructions or data by supplying an address to the memory. The instructions are then supplied by the memory to the processor for execution.
FIG. 1
is a block diagram illustrating a typical block of ROM. Here, the block of ROM
100
is divided into three segments
101
,
102
and
103
. Each of these segments may represent a range of addresses. For example, segment
101
may represent addresses from
0
to
255
, segment
102
may represent addresses
256
to
511
, and segment
103
may represent addresses
512
to
767
. The block of ROM
100
is accessed through an address bus
104
. Data is then read from the appropriate address in the ROM and output on the data bus
105
.
FIG. 2
is a simplified schematic illustrating the details of a ROM design and the implementation of a prior art sensing gate and latch. A typical ROM circuit consists of an address detection gate
201
connected to each word-line
205
. Typically, a word-line such as word-line
205
will contain a number of bit-lines
203
and
207
. Further, memory contains a number of word-lines such as illustrated here by word-lines
205
,
206
, and
208
. Each bit-line is connected to a gate
209
which in turn drives an output
210
.
A decoded address is provided on address lines
200
. This address is detected by a gate
201
attached to a word-line. If the word-line is selected, the selected cell
202
will then be discharged. The discharge of this bit-line
203
will then be passed through a gate
209
to the output
210
. In the prior art, this output
210
may then applied to a sensing gate
211
. In some applications this sensing gate may have more than one bit-line applied to the inputs such as
210
and
213
. If the output of this sensing gate
211
is required to remain on for more than a single clock cycle, it could be latched by an external latch
212
.
Normally, an address is supplied to a ROM and data from that address must be supplied within one clock cycle. As processor speed increases, the time in which a ROM must supply data decreases. Several solutions have been provided to address this problem. One solution was to divide one bit-line into two. This method reduced the capacitance of the individual lines allowing for quicker discharge of the cell. This discharge could then be latched by an external latch to prolong the signal through an entire clock cycle. However, this external latch increased circuit complexity and slowed down overall response times. As processor speeds increase, this solution becomes less effective.
SUMMARY OF THE INVENTION
According to one embodiment, data signals are sensed from memory cells and temporarily latched on an output signal. During a first phase of a clock cycle, multiple input bit-lines are precharged. Subsequently, a discharged input bit-line is sensed during a second phase of the clock cycle. Responsive to the sensing step, the output signal is set to a first state and maintained for at least one clock cycle. Advantageously, in this manner, a multiple input bit-line detection circuit provides quick response and prolongs output of data from an addressed memory cell without the complexity and negative effects of prior approaches that must employ an external latch.
Other features and advantages of the invention will be apparent from the accompanying drawings and from the detailed description.


REFERENCES:
patent: 5142494 (1992-08-01), D'Luna
patent: 5646893 (1997-07-01), McMinn et al.
patent: 6097618 (2000-08-01), Jenne
patent: 6128224 (2000-10-01), Morton et al.

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