Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-01-16
1998-10-20
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518524, G11C 1606
Patent
active
058256903
ABSTRACT:
A semiconductor non-volatile storage device has a memory cell array including a plurality of memory cells arranged in a form of matrix. Each of the memory cells has a charge accumulation layer and a control gate stacked on a semiconductor substrate for enabling electrical updating by increasing and decreasing of charge in the charge accumulation layer. An equal level of verification potential is applied for all of bit lines of the memory cells and a predetermined verification potential is applied to a selected control gate for performing re-writing for insufficiently written memory cells without generating data for re-writing per every verification by a logic circuit.
REFERENCES:
patent: 5299162 (1994-03-01), Kim
patent: 5357462 (1994-10-01), Tanaka
patent: 5379256 (1995-01-01), Tanaka
patent: 5386422 (1995-01-01), Endoh
patent: 5452249 (1995-09-01), Miyamoto
Mai Son
NEC Corporation
Nelms David C.
LandOfFree
Semiconductor non-volatile storage device having verification po does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor non-volatile storage device having verification po, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor non-volatile storage device having verification po will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-252616