Semiconductor memory device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 2312, 357 59, 357 41, 357 239, 365104, H01L 2978, H01L 2702, H01L 2904, G11C 1700

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046300899

ABSTRACT:
A semiconductor memory device including a first MIS transistor having source and drain regions formed in a substrate and a gate electrode provided on the substrate through an insulating layer; a semiconductor layer provided on the first MIS transistor through the insulating layer and being in contact with the source and drain regions of the first MIS transistor; a second MIS transistor having source and drain regions formed in the semiconductor layer and being in contact with the source and drain regions of the first MIS transistor and having a gate electrode provided on the semiconductor layer through an insulating layer; and a bit line being in contact with the source or drain region of the second MIS transistor and extended on the second MIS transistor; each gate electrode of the first and the second MIS transistors being connected with different word lines respectively, and impurities having an amount more than a required value being doped to at least one of the substrate and the semiconductor layer below the gate electrode of the first MIS transistor and the semiconductor.

REFERENCES:
patent: 4364167 (1982-12-01), Donley
patent: 4476475 (1984-10-01), Naem et al.
Electronics International, vol. 56, No. 19, Sep. 1983.
IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2, Apr. 1982.

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