Semiconductor device with multi-electrode construction equivalen

Details Semiconductor device with multi-electrode construction equivalen Semiconductor device with multi-electrode construction equivalen

1986-01-22

1986-12-16

Clawson, Jr., Joseph E.

357 15, 357 236, 357 51, H01L 2992

Patent

active

046300821

ABSTRACT:
A semiconductor device with a multi-electrode construction equivalent to a conventional variable capacitance diode in function is disclosed. The semiconductor device is characterized in that a capacitance read-out portion with a capacitance read-out electrode and a plurality of depletion layer control portions with control electrodes, respectively, are formed in a bulk of a semiconductor single crystal, a depletion layer within said bulk is changed in width, when a plurality of said depletion layer control portions are reverse-biassed in turn through said control electrodes, whereby a change in capacitance can be read out through said capacitance read-out electrode.

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patent: 3893147 (1975-07-01), Williams et al.
patent: 4017885 (1977-04-01), Kendall et al.
patent: 4156249 (1979-05-01), Koo
"New Multiple Tuning Diodes", by J. B. Dance; Radio & Electronics Constructor; Aug. 1975.
"A Hybrid Voltage-Variable Capacitor", by Bernard A. MacIver; IEEE Transactions on Electron Devices, vol. 18, No. 7, Jul. 1971.
"Varactor Diodes", by Gerald Schaffner; Electronics World; pp. 53-56; Jul. 1966.
"Thin-Oxide MOS Capacitance Studies of Fast Surface States"; Applied Physics Letters: 1 Sep. 1970; W. Hunter et al., vol. 17, No. 5; pp. 211-213.
"Lateral AC Current Flow Model for Metal-Insulator-Semiconductor Capacitors", by E. H. Nicollian and A. Goetzberger; IEEE Transactions on Electron Devices; Mar. 1965; pp. 108-117.

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