1988-11-18
1989-09-05
Larkins, William D.
357 237, 357 2311, 357 49, H01L 2712
Patent
active
048643807
ABSTRACT:
A common island complementary-metal-oxide semiconductor device comprising an island of semiconductor material disposed on an insulating substrate is disclosed. Both N-channel and P-Channel transistors are formed in the common island of semiconductor material, but the gate electrode does not extend over the sidewalls of the silicon island. In order to electrically isolate the source and drain regions for each transistor, the areas of the silicon island outside of the channel region are doped with the appropriate dopants to form back-to-back diodes in series with respect to the source and drain regions. Additionally, a diode is disposed between both the N-channel and P-channel transistors to electrically isolate the two transistors.
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Ipri Alfred C.
Plus Dora
Davis Jr. James C.
General Electric Company
Larkins William D.
Steckler Henry I.
Webb II Paul R.
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