Method of making a resistor, method of making a diode, and SRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257538, 257903, 257904, H01L 2900

Patent

active

058250743

ABSTRACT:
Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

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"Silicon Processing for the VLSI Era vol. 1--Process Technology," by S. Wolf and R.N, Tauber, Lattice Press, pp. 137-138 and 189-191, Dec. 1986.

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