Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
1999-07-23
2001-07-03
Mills, Gregory (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S622000, C438S694000, C430S005000, C216S049000
Reexamination Certificate
active
06255225
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of forming a resist pattern on a semiconductor base, the pattern having predetermined dimensions and a profile, a method of manufacturing a semiconductor device using this method of forming a resist pattern, a device and a hot plate for forming a resist pattern.
2. Discussion of Background
In manufacturing a semiconductor device, a pattern is formed by patterning a resist on an oxide film, being an etched film, such as a polysilicon film, and a metallic film, and by etching using this resist as a mask. However, in accordance with recent microminiaturization of this pattern, a resist pattern is formed by providing an anti-reflective coating for obtaining a high accuracy in controlling dimensions and maintaining a resist profile on the etched film.
As such an anti-reflective coating, an inorganic anti-reflective coating, for example, a silicon nitride (Si
3
N
4
) film, a silicon oxynitride (SiON) film, and a titanium nitride (TiN) film and an organic anti-reflective coating of a coating type are used. However, the anti-reflective coating having an inorganic base is required to be careful so as not to be harmful to a device function in a case that it is left in a semiconductor device as a final product. Also, it is difficult to establish a stable removing process in a case that such an anti-reflection film is removed. As described, it is difficult to use the anti-reflective coating having the inorganic base, and the anti-reflective coating having the organic base is advantageous because of its easy removal after photolithographing.
However, the above-mentioned conventional method of forming the resist pattern and so on had problems that pattern defects were caused, a shape of resist pattern was deteriorated, and dimensions of resist were instabilized because a surface condition of the organic base is differed by characteristics of its material, a density of the film, and so on, and therefore a resist film on an upper layer of the organic base was influenced by the surface conditions when the resist pattern was formed on the organic layer.
Such phenomenons were conspicuous when a chemically amplified resist, sensitive to an atmosphere of resist film, was used, whereby a big problem was caused when the resist, currently being a main stream of a resist for microminiaturization, was used.
In case of a positive resist, the chemically amplified resist is mainly composed of a resin obtained by bonding molecules (dissolution inhibition function group) for restricting a solubility to a portion inherently depressing a high solubility in a developing solution and a photo acid generator, wherein the resist is not dissolved in the developing solution in an unexposed portions because a reaction caused by an exposure does not proceed, and acids are generated from the acid generator by a photoreaction in an exposed portion, whereby these acids facilitate a thermal deprotection reaction of dissolution inhibition function group in the resin and finally a reaction of the resin solubilized in the developing solution.
There were problems that, in a case that materials exhibiting acid were contained in an under layer film, an deprotection reaction was abnormally proceeded because acidic materials promoted a deprotection reaction of the dissolution inhibition function group in the resist. On the other hand, there were problems that, in a case that basic materials were contained in the under layer film, acids generated during resist process were nutrized by these basic materials so as not to contribute the deprotection of the dissolution inhibition function group, and so on.
SUMMARY OF THE INVENTION
It is an object of the present invention to solve the above-mentioned problems inherent in the conventional technique and to provide a method of forming a resist pattern for improving an accuracy in dimensions of an etched film and a method of manufacturing a semiconductor device using the method of forming-the resist pattern along with an increment of a resist usable for the process of the etched film positioned on a semiconductor base.
Another object of the present invention is to provide a device for forming a resist pattern for attaining the above-mentioned object and a hot plate for preventing the device for forming the resist pattern from being contaminated by materials escaped from an organic film at a time of heat treatment of the organic film.
According to a first aspect of the present invention, there is provided a method of forming a resist pattern comprising steps of: forming an etched film on a semiconductor base; forming an organic film on the etched film; and forming a resist film on the organic film, wherein a surface of the organic film is reformed in response to properties of the resist material.
According to a second aspect of the present invention, there is provided a method of forming the resist pattern, wherein the surface of the organic film is reformed using an acidic solution.
According to a third aspect of the present invention, there is provided a method of forming the resist pattern, wherein the surface of the organic film is reformed using a base solution.
According to a forth aspect of the present invention, there is provided a method of forming the resist pattern, wherein the surface of the organic film is reformed by a surface oxidation treatment.
According to a fifth aspect of the present invention, there is provided a method of forming the resist pattern, wherein the surface of the organic film is reformed by adjusting a temperature of thermal treatment for the organic film.
According to a sixth aspect of the present invention, there is provided a method of forming the resist pattern, wherein substances to be escaped from an inside of the organic film to an outside thereof at a time of heat treatment are contained in the organic film by introducing into or bonding to the organic film.
According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device utilizing one of the methods of forming the resist pattern according to the first through seventh aspects of the present invention.
According to an eighth aspect of the present invention, there is provided a method of forming a resist pattern, wherein chemical solution supplying system for reforming a surface of an organic film is installed in a resist coater cup.
According to a ninth aspect of the present invention, there is provided a hot plate having a component for trapping substances escaped from the organic film at a time of heat treatment.
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Ishikawa Eiichi
Yamada Yoshiaki
Goudreau George
McDermott & Will & Emery
Mills Gregory
Mitsubishi Denki & Kabushiki Kaisha
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