Silicon on insulator (SOI) semiconductor device

Details Silicon on insulator (SOI) semiconductor device Silicon on insulator (SOI) semiconductor device

1988-05-17

1989-09-05

Mintel, William A.

357 91, 357 90, 357 239, 357 237, 357 231, 357 234, H01L 2978

Patent

active

048643777

ABSTRACT:
A semiconductor device includes a silicon layer of a first conductivity type, which is disposed on a dielectric substrate and in which at least two zones of a semiconductor circuit element of a second opposite conductivity type and a contact zone having the same conductivity type as, but a higher doping concentration than the silicon layer are provided, which zones adjoin a surface of the silicon layer. According to the invention, the contact zone extends below the zones of the field effect transistor. Thus, it is counteracted that at an interface of the silicon layer and the substrate a channel is formed which shortcircuits the zones. Moreover, the semiconductor device has a constant threshold voltage. This semiconductor device has the additional advantage that it can be manufactured in a very simple manner.

REFERENCES:
patent: 4371955 (1983-02-01), Sasaki
patent: 4454524 (1984-06-01), Spence
MacIver et al., "J-Mos: A Versatile Power Field-Effect Tansistor", IEEE Electron Device Letters, vol. EDL-5, No. 5, May 1984, pp. 154-156.
Gallagher, "Silicon on Insulator Attains High Yields by Boundary Control," Electronics, May 5, 1983, pp. 85-86.

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