Semiconductor device

Details Semiconductor device Semiconductor device

1996-07-09

1999-05-11

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257767, 257770, H01L23/48;23/52;29/40

Patent

active

059030534

ABSTRACT:
A semiconductor device comprising a conductive layer and an amorphous alloy layer formed on the bottom surface of said conductive layer and acting as a barrier layer. The conductive layer is either an electrode layer or a wiring layer. The amorphous alloy layer is made of a matrix phase and microcrystal grains. The matrix phase consists mainly of a Ti--Si--N amorphous alloy. The microcrystal grains are dispersed in the matrix phase, not continuously arranged in the direction of thickness of the amorphous alloy layer.

REFERENCES:
patent: 5516579 (1996-05-01), Agnello et al.
patent: 5525837 (1996-06-01), Choudhury
patent: 5607722 (1997-03-01), Vaarstra et al.
patent: 5641985 (1997-06-01), Tamura et al.
patent: 5659057 (1997-08-01), Vaarstra
"Ti-Si-N Diffusion Barriers Between Silicon and Copper", Rid et al--IEEE Electron Device Letters. vol. 15. No. 8, Aug. 1994.
"Evaluation of Amorphous (Mo, Ta, W), -Si-N Diffusion Barriers for <Si>/Cu Metallizations" Reid et al, Thin Solid Films, 236 (1993) p. 319-324, 1993.
Byoung Taek Lee, et al.; Journal IEEE, 1997; "Integration of (Ba, Sr) TiO.sub.3 Capacitor With Platinum Electrodes Having SiO.sub.2 Spacer"; pp. 249-252.

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