Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-11-26
1998-10-20
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
22504923, H01J 37317
Patent
active
058250387
ABSTRACT:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
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Blake Julian G.
Brailove Adam A.
Hughey Barbara J.
Purser Kenneth H.
Rose Peter H.
Berman Jack I.
Eaton Corporation
Engellenner Thomas J.
Laurentano Anthony A.
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