MOS storage integrated circuit using individual FET elements

Details MOS storage integrated circuit using individual FET elements MOS storage integrated circuit using individual FET elements

1977-05-16

1979-07-31

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 24, 357 45, 357 59, 357 71, 307238, H01L 2710

Patent

active

041632427

ABSTRACT:
A MOS integrated circuit incorporating a plurality of storage cells is provided, with a field effect transistor and an individual capacitor for each cell. Electrical conductors make contact with the electrodes of the field effect transistors on two planes, with the conductors connected with the gates of the FET's being disposed in a first plane, and the conductors connected with another terminal of the FET's being disposed in a second plane.

REFERENCES:
patent: 3533089 (1970-10-01), Wahlstrom
patent: 3704384 (1972-11-01), DeSimone et al.
patent: 3706891 (1972-12-01), Donofrio et al.
Stein et al., IEEE Journal of Solid-State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 336-340.
Cohen et al., "One-transistor cell...," Electronics, Aug. 2, 1971, pp. 69-75 and front cover.
Stein et al., IEEE Journal of Solid-State Circuits, vol. SC-8, No. 5, Oct. 1973, pp. 298-323.
Langdon, "Molybdenum gates...," Electronics, Apr. 12, 1971, pp. 68-71; and IEEE Journal of Solid-State Circuits, vol. SC-6, No. 5, Oct. 1971, p. 311.

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