Multiple emitter and normal gate semiconductor switch

Details Multiple emitter and normal gate semiconductor switch Multiple emitter and normal gate semiconductor switch

1977-11-18

1979-07-31

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 55, 307252G, 307305, H01L 2974

Patent

active

041632419

ABSTRACT:
The specification discloses a multilayer semiconductor rectifier having an emitter gate, a cathode and an anode. In addition, the rectifier includes at least one region of semiconductor material electrically remote from the emitter gate. A second gate electrode contacts the region in order to provide additional switching control to the rectifier. In one embodiment of the invention, the second gate electrode may be biased to inhibit gating operation by the emitter gate electrode. Thus, switching signals may be applied to both the emitting gate and the second gate electrode in order to switch the rectifier. In another embodiment, gating signals may be applied to the emitter gate in order to render the rectifier conductive, while gating signals may be applied to the second gate electrode in order to render the rectifier nonconductive.

REFERENCES:
patent: 3243602 (1966-03-01), Storm
patent: 3284680 (1966-11-01), Gentry et al.
patent: 3401320 (1968-09-01), Weinstein
patent: 3816759 (1974-06-01), Shepherd
patent: 4089024 (1978-05-01), Tanaka

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