Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
1999-12-17
2001-09-04
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S503000, C257S531000
Reexamination Certificate
active
06285071
ABSTRACT:
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims priority from prior French Patent Application No. 98-15940, filed Dec. 17, 1998, the entire disclosure of which is herein incorporated by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to semiconductor devices, and more specifically to decoupling between a noise emitter and a noise-sensitive receiver that are in an integrated circuit formed on a semiconductor-on-insulator type substrate.
2. Description of Related Art
The coupling noise in an integrated circuit essentially comes from two sources, namely the electromagnetic coupling due to the package and metal lines of the circuit and the electrical coupling due to the substrate (e.g., SOI substrate). The present invention is directed to reducing the electrical coupling noise due to the substrate. In particular, when a noise emitter injects charges into the substrate, the charges become distributed uniformly and then can be picked up by a receiver whose operation may be perturbed if it is sensitive to this electrical noise. For example, a “noise emitter” in the context of this description can be a strong-signal transistor that injects charges into the substrate, and the charges can be picked up by a weak-signal transistor, which then behaves as a noise-sensitive receiver. As an exemplary environment, such strong and weak-signal transistors can be incorporated into radio messaging receivers.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a noise emitter and a noise sensitive receiver within the same integrated circuit, while ensuring decoupling between the emitter and the receiver.
Another object of the present invention is to provide a noise emitter and a noise-sensitive receiver within the same integrated circuit, while ensuring decoupling, at high frequencies.
One embodiment of the present invention provides a semiconductor device of the type having an integrated circuit with connection terminals connected to metal pads by connecting wires. The integrated circuit includes a substrate-on-insulator type semiconductor substrate having a lower portion on top of which there is an upper insulating layer. A first semiconductor block and a second semiconductor block are produced in the upper insulating layer, and decoupling means are arranged in the upper insulating layer between the first and second semiconductor blocks. The first semiconductor block defines a first capacitor with the lower portion of the substrate, the second semiconductor block defines a second capacitor with the lower portion of the substrate, and the decoupling means includes at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate. The capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors. In a preferred embodiment, the first block is connected to an external ground via a first inductive link, the second block is connected to an external ground via a second inductive link, and the semiconductor well of the decoupling means is connected to an external ground via a decoupling inductive link whose inductive value is lower than the inductive value of each of the first and second inductive links.
Another embodiment of the present invention provides a method of providing noise decoupling in an integrated circuit having a substrate-on-insulator type semiconductor substrate with a lower portion on top of which there is an upper insulating layer. According to the method, a first semiconductor block and a second semiconductor block are produced in the upper insulating layer, with the first semiconductor block defining a first capacitor with the lower portion of the substrate and the second semiconductor block defining a second capacitor with the lower portion of the substrate. Decoupling means are produced in the upper insulating layer between the first and second semiconductor blocks. The decoupling means includes at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate, and the capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors.
Other objects, features, and advantages of the present invention will become apparent from the following detailed description. It should be understood, however, that the detailed description and specific examples, while indicating preferred embodiments of the present invention, are given by way of illustration only and various modifications may naturally be performed without deviating from the present invention.
REFERENCES:
patent: 4654689 (1987-03-01), Fujii
patent: 6093957 (2000-07-01), Kwon
patent: 6124625 (2000-09-01), Chern et al.
patent: 2507 017A (1982-12-01), None
Ndagijimana, F, et al., “The Inductive Connection Effects of a Mounted SPDT in a Plastic SO8 Package”, IEEE MTT-S International Microwave Symposium Digest, vol. 1, Jun. 14, 1993, pp. 91-94, XP000436344.
“Leadless Decoupling Capacitor Fabricated on Wafer Backside”, IBM Technical Disclosure Bulletin, vol. 32, No. 3a, Aug. 1989, pp. 403-404, XP002110972.
Preliminary Search Report dated Aug. 2, 1999 with annex on French Application No. 9815940.
Bongini Stephen
Fleit Kain Gibbons Gutman & Bongini P.L.
Galanthay Theodore E.
Ngo Ngan V.
STMicroelectronics S.A.
LandOfFree
Substrate-on-insulator semiconductor device with noise... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate-on-insulator semiconductor device with noise..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate-on-insulator semiconductor device with noise... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2454973