Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1993-08-16

1996-02-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054917093

ABSTRACT:
In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

REFERENCES:
patent: 5331655 (1994-07-01), Harder et al.
"Low-Threshold Strained GaInP Quantum-Well Ridge Lasers with AlGaAs Cladding Layers", P. Unger et al., 13th International Semiconductor Laser Conference pp. 188-189 (Sep. 21, 1992).
"Reliable 1-2W CW Red-Emitting (Al)GainP Diode Laser Array with AlGaAs Cladding Layers", H. Jaeckel et al. Electronics Letters 29(1):101-102 7 Jan. 1993.

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