Methods of forming materials containing carbon and boron,...

Catalyst – solid sorbent – or support therefor: product or process – Catalyst or precursor therefor – Inorganic carbon containing

Reexamination Certificate

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C502S174000, C502S527140, C502S527160, C502S527240, C501S095100, C501S087000, C423S291000, C428S366000, C428S367000, C428S368000, C428S378000, C428S392000, C428S688000, C428S704000, C427S255290, C427S249300

Reexamination Certificate

active

06235675

ABSTRACT:

TECHNICAL FIELD
The invention pertains to materials containing carbon and boron, and to methods of forming such materials. The carbon and boron materials can be in the form of, for example, filaments. The invention also pertains to methods of utilizing materials comprising carbon and boron in other constructions. For example, the invention pertains to catalysts and methods of forming catalysts.
BACKGROUND OF THE INVENTION
Single crystal boron carbide (B
4
C) is a high temperature refractory material with a melting temperature in excess of 2,400° C. The crystal structure of boron carbide is rhombohedral and consists of 12-atom icosahedral units located at corners of a rhombohedral unit cell connected by C—B—B or C—B—C chains lined along a cell diagonal (O. Chauvet, D. Emin, L. Forro, T. L. Aselage, and Z. Zuppiroli, Phys. Rev. B 53,14450 (1996)). The equilibrium compound in a B—C system is B
4
C (ASM Handbook, Vol. 3, Alloy Phase Diagrams (edited by H. Baker), ASM International, Metals Park, Ohio (1992).) Other compounds within the system are generally regarded as solutions of boron in B
4
C, or as solid solutions with carbon. Single crystal boron carbide has potential application in thermoelectric power conversion (C. Wood and D. Emin, Phys. Rev. B 29, 4582 (1984); C. Wood, D. Emin, and P. E. Gray, Phys. Rev. B 31, 6811 (1985).) A polaronic transport model has been developed to explain the thermoelectric conversion properties of single crystal boron carbide, where polaron hopping between icosahedra is phonon-assisted, or in other words, thermally activated (O. Chauvet, D. Emin, L. Forro, T. L. Aselage, and L. Zuppiroli, Phys Rev. B 53,14450 (1996); C. Wood and D. Emin, Phys. Rev. B 29,4582 (1984); C. Wood, D. Emin, and P. E. Gray, Phys. Rev. B 31, 6811 (1985); I. A. Howard, C. L. Beckel, and D. Emin, Phys. Rev. B 35, 2929 (1987); I. A. Howard, C. L. Beckel, and D. Emin, Phys. Rev. B 35,9265 (1987).) In light of the potential applications of boron carbide, it would be desirable to develop alternative methods of forming boron carbide crystals.
SUMMARY OF THE INVENTION
In one aspect, the invention includes a method of forming a material containing carbon and boron. A substrate is provided within a chemical vapor deposition chamber. A carbon and boron precursor is flowed into the chamber. The precursor is a compound that comprises both carbon and boron The precursor is utilized to chemical vapor deposit a material onto the substrate. The material comprises carbon and boron.
In another aspect, the invention includes a method of forming a catalyst. A substrate is provided within a chemical vapor deposition chamber. A carbon and boron precursor is flowed into the chamber. The precursor is a compound that comprises both carbon and boron. The precursor is utilized to chemical vapor deposit a first material onto the substrate. The first material comprises carbon and boron, The first material is coated with a catalytic material.
In yet another aspect, the invention encompasses a catalytic material comprising a support structure that includes a plurality of individual filaments. The individual filaments comprise boron and carbon, and greater than 90% of the individual filaments having a thickness of less than 150 nanometers. The catalytic material further comprises a catalytic coating on the individual filaments. In a particular embodiment of the invention the catalytic coating comprises a material that catalyzes oxidation of CO and hydrocarbons.


REFERENCES:
patent: 3369920 (1968-02-01), Boedeau et al.
patent: 3846224 (1974-11-01), Leclercq et al.
patent: 3867191 (1975-02-01), Galasso et al.
patent: 4225355 (1980-09-01), Galasso et al.
patent: 4287259 (1981-09-01), Riley et al.
patent: 4481257 (1984-11-01), Suplinskas et al.
patent: 4702770 (1987-10-01), Pyzik et al.
patent: 5429870 (1995-07-01), Kmetz et al.

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