Mask for making a semiconductor device and fabrication method th

Details Mask for making a semiconductor device and fabrication method th Mask for making a semiconductor device and fabrication method th

1997-08-22

1999-05-11

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

378 35, G03F9/00

Patent

active

059027061

ABSTRACT:
A mask for a semiconductor device includes a frame having an opening therein, a membrane film formed on the frame, and a patterned light shield formed on the membrane via an interlayer. To form the mask, an interlayer is formed on a first silicon layer, and a second silicon layer is formed on the interlayer. The second silicon layer is selectively etched to thereby form a plurality of openings therethrough, and a light shield is formed in a corresponding one of the openings. The remaining second silicon layer is removed, and a predetermined region of the first silicon layer is etched to expose the interlayer therethrough. A membrane film is formed on an entire lower surface of the resultant structure, and a predetermined region of the interlayer is etched to expose a predetermined region of the membrane film.

REFERENCES:
patent: 5754619 (1998-05-01), Yoshihara et al.
patent: 5773177 (1998-06-01), Ikeda et al.

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