Phase shift mask, blank for phase shift mask, and method of manu

Details Phase shift mask, blank for phase shift mask, and method of manu Phase shift mask, blank for phase shift mask, and method of manu

1996-11-12

1999-05-11

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

428698, G03F9/00

Patent

active

059027029

ABSTRACT:
A silicon nitride film and a silicon oxide film are deposited on a transparent substrate 1 to cover a first light transmitting region and to expose a second light transmitting region. A light blocking film is formed in a light blocking region sandwiched between the first and the second light transmitting regions Ta and Tn to cover the transparent substrate 1. A phase shift mask, a blank for a phase shift mask, and a method of manufacturing a phase shift mask are accordingly obtained in which the phase difference of the light transmitted through the light transmitting regions adjacent to each other with the light blocking film interposed is substantially 180.degree. and the intensity of each transmitting light is identical.

REFERENCES:
patent: 5284724 (1994-02-01), Noelscher et al.
patent: 5328786 (1994-07-01), Miyazaki et al.
patent: 5362591 (1994-11-01), Imai et al.
C. Pierrat, et al: "Phase-Shifting Mask Topography Effects on Lithographic Image Quality", SPIE, vol. 1927 Optical/Laser Microlithography VI (1993), pp. 28-41.
Ahmad D. Katnani, et al: "Phase and Transmission Error Study for the Alternating-Element (Levenson) Phase-Shifting Mask", SPIE, vol. 1674 Optical/Laser Microlithography V (1992), pp. 264-270.

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