Method for bulk (or byte) charging and discharging an array of f

Details Method for bulk (or byte) charging and discharging an array of f Method for bulk (or byte) charging and discharging an array of f

1995-02-24

1996-02-13

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 36518526, 36518509, 3651853, G11C 1140

Patent

active

054916577

ABSTRACT:
There is provided an improved method for bulk (or byte) programming an array of flash EEPROM memory cells. A negative voltage is applied to the substrate of the array. A reference voltage of zero volts is applied simultaneously to the drain regions of selected memory cells that are to be programmed. There is also applied simultaneously the same reference voltage of zero volts to the control gates of the selected memory cells. The present invention provides for low current consumption and fast programming of the memory cell, which require only a single, low voltage power supply. The endurance reliability is greater than 100,000 cycles.

REFERENCES:
patent: 4451905 (1984-05-01), Moyer
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5084843 (1992-01-01), Mitsuishi et al.
patent: 5349220 (1994-09-01), Hong
patent: 5349553 (1994-09-01), Yamada et al.
patent: 5357463 (1994-10-01), Kinney

Affiliated with

Also associated with

Rating

Method for bulk (or byte) charging and discharging an array of f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for bulk (or byte) charging and discharging an array of f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for bulk (or byte) charging and discharging an array of f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-244684