Vertical cavity semiconductor lasers

Details Vertical cavity semiconductor lasers Vertical cavity semiconductor lasers

1990-01-30

1991-05-21

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, H01S 319

Patent

active

050181572

ABSTRACT:
In a vertical cavity laser, such as an InP based vertical laser, the energy bandgap in the active region can be made equal to or larger than the bandgap in a semiconductor mirror stack by virtue of degenerate doping in the stack sufficient to suppress electronic band-to-band optical absorption. For example, the active region of an InP based laser can be lattice-matched GaInAs, GaInAsP, or a multiple quantum well structure composed of layers of InP and GaInAs--with the mirror stack composed of alternating layers of InP and degenerately doped n-type lattice-matched GaInAs or GaInAsP.

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