Structure for contacting a narrow width PN junction region

Details Structure for contacting a narrow width PN junction region Structure for contacting a narrow width PN junction region

1984-10-18

1987-12-08

Edlow, Martin H.

357 34, 357 35, 357 68, H01L 2904

Patent

active

047121254

ABSTRACT:
A method and resulting structure for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.

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