Method of forming a low-K layer in an integrated circuit

Details Method of forming a low-K layer in an integrated circuit Method of forming a low-K layer in an integrated circuit

1995-06-07

1998-10-20

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438718, 438694, 216 81, H01L 21302

Patent

active

058246037

ABSTRACT:
This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The device comprising: a substrate; a TFE AF 44 layer on top of the substrate; and a semiconductor layer 42 on top of the TFE AF 44 layer. The device may be an electronic or optoelectronic device. The semiconductor layer may be a metal or other substance.

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