Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-06-03

1999-05-11

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

H05H1/00

Patent

active

059024054

ABSTRACT:
A plasma processing apparatus has a second electrode set parallel to a first electrode to be set in a deposition chamber capable of being set in an airtight vacuum, and an RF power supply path for applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the second electrode. In the plasma processing apparatus, a high-voltage capacitor having a small capacitance is arranged on the RF power supply path. With this arrangement, the plasma processing apparatus capable of uniformly, stably processing a relative large base with a plasma at a high processing speed is provided. Further, the plasma processing apparatus in which the manufacturing time can be shortened and cost can be decreased is provided.

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