Controlled avalanche voltage transistor and magnetic sensor

Details Controlled avalanche voltage transistor and magnetic sensor Controlled avalanche voltage transistor and magnetic sensor

1978-07-13

1981-06-30

Larkins, William D.

357 27, 357 34, 357 36, 357 86, H01L 2982

Patent

active

042765552

ABSTRACT:
A heretofore undiscovered suddenly conducting avalanche voltage effect is described with relationship to a new family of hybrid transistors. The devices constructed also exhibit magnetic sensitivity. The magnetic responsiveness of such devices creates a new family of magnetic sensors which utilize magnetic modulation of the avalanche voltage produced by the new effect. New transistor structure elements are incorporated in the devices. These include an impact ionization promoter means and an intrinsic, or high resistivity, depleted base region which extends at least partially from a collector toward an emitter. Minority carrier injection efficiency control means and transportation efficiency control means are also included. The character of the base region extending between the emissive junction and the collector is carefully controlled so that the product of the ionization current multiplication factor M and an electron-hole recombination probability factor .alpha. is less than unity. Within limits, any specifically desired avalanche voltage can be created by controlling the characteristics of the transistor structure. This voltage may then be varied bidirectionally by magnetic fields to form a new class of magnetic sensors.

REFERENCES:
patent: 2887423 (1959-05-01), Beale
patent: 3140438 (1964-07-01), Shockley et al.
patent: 3196329 (1965-07-01), Cook et al.
patent: 3739238 (1973-06-01), Hara
patent: 3787717 (1974-01-01), Fischer et al.
patent: 3829889 (1974-08-01), Bate
patent: 3990091 (1976-11-01), Cresswell et al.
patent: 4053925 (1977-10-01), Burr et al.
patent: 4100561 (1978-07-01), Ollendorf
patent: 4131908 (1978-12-01), Daub et al.
Miller, "Ionization Rates . . . ", Physical Review, vol. 105, No. 4, Feb. 15 1975, pp. 1246-1249.
Wolf, Semiconductors (Wiley-Interscience, NY, 1971), p. 324.
Assembly Manual, Health Kit Model IO-102, Oscilloscope (Health, Benten Harbor, Mich., 1971), p. 81 & Circuit Diagram.
Sze, Physics of Semiconductor Devices, (Wiley-Interscience, N.Y., 1969), pp. 1-812.

Affiliated with

Also associated with

Rating

Controlled avalanche voltage transistor and magnetic sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controlled avalanche voltage transistor and magnetic sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled avalanche voltage transistor and magnetic sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2434572