Control of surface recombination loss in solar cells

Details Control of surface recombination loss in solar cells Control of surface recombination loss in solar cells

1979-07-23

1981-06-30

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

136256, 136262, 357 30, 357 52, 427 74, H01L 3118

Patent

active

042761379

ABSTRACT:
Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating.

REFERENCES:
patent: 3620829 (1971-11-01), Beck
patent: 3675026 (1972-07-01), Woodall
patent: 3993506 (1976-11-01), Moon
patent: 4105471 (1978-08-01), Yerkes et al.
patent: 4144094 (1979-03-01), Coleman et al.
R. P. H. Chang et al., "A New Method of Fabricating Gallium Arsenide MOS Devices", Appl. Phys. Lett., vol. 32, pp. 332-333 (1978).
H. J. Hovel et al., "Improved GaAs Solar Cells With Very Thin Junctions", Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp. 945-947.
R. P. H. Chang et al., "Plasma Oxidation of GaAs", Appl. Phys. Lett., vol. 29, pp. 56-58 (1976).

Affiliated with

Also associated with

Rating

Control of surface recombination loss in solar cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Control of surface recombination loss in solar cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of surface recombination loss in solar cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2434156