Method of forming thin niobium carbonitride superconducting film

Details Method of forming thin niobium carbonitride superconducting film Method of forming thin niobium carbonitride superconducting film

1980-02-20

1981-07-21

Gantz, Delbert E.

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Of inorganic material

204192S, 428701, C23C 1500

Patent

active

042799694

ABSTRACT:
Thin superconducting NbCN films are deposited by reactive sputtering onto a dielectric substrate inside a vacuum chamber. The substrate is heated to a temperature of 600.degree.-1200.degree. C., ultra-pure Argon is introduced into the chamber, and niobium is presputtered from a high-purity target onto a shutter. A cyanogen and nitrogen gas mixture is introduced into the chamber at a rate of approximately 10.sup.-6 Torr liters/sec, and a shutter is opened exposing the substrate to the sputtered niobium. The deposited niobium reacts with the cyanogen-nitrogen gas mixture to form NbCN films of exceptional purity, and which exhibit superior superconductor properties.

REFERENCES:
patent: 3912612 (1975-10-01), Gavaler et al.
S. A. Wolf et al., ". . . Properties of Superconducting RF Reactively Spured NBN Films", J. Vac. Sci. Technol., 17(1), Jan./Feb. 1980, pp. 411-414.
J. R. Gavaler, "Superconducting Properties of Niobium Carbonitride Thin Films", Applied Physics Letters, vol. 19, No. 8, (15 Oct. 1971), pp. 305-307.
M. A. Janocko, "Preparation and Properties of Superconducting Thin Films . . . ", J. Vac. Sci. Technol., vol. 7, No. 1, (Jan./Feb. 1970), pp. 127-129.

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